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<p>This study investigates a nanosheet field-effect transistor with a gate stack composed of two oxide layers: SiO₂ and HfO₂. Using simulation-based analysis, this study focused on the impact of the dielectric composition on self-heating effects. Specifically, we consider the impact of the thickness ratio of the SiO₂ and HfO₂ layers for different forms of the channel cross-section while under a constant equivalent gate oxide thickness. The influence of edge effects on the drain current was also examined. Furthermore, a comparative analysis of the Joule heating and heat dissipation within the transistor channel was conducted for different gate dielectric compositions. Contrary to expectations, the results demonstrate that increasing the total thickness of the dual-layer gate dielectric does not increase the channel temperature, but rather decreases it.</p>

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A Comprehensive Study of the Impact of the Gate Oxide Material Composition on the Self-Heating Effect in Nanosheet Field Effect Transistor

  • 期刊论文

  • 发表日期：

    2025年10月2日

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  • A. E. Atamuratov,
  • D. R. Rajapov,
  • M. M. Khalilloev,
  • K. Sivasankaran,
  • M. Balasubbareddy,
  • A.Yusupov

摘要

This study investigates a nanosheet field-effect transistor with a gate stack composed of two oxide layers: SiO₂ and HfO₂. Using simulation-based analysis, this study focused on the impact of the dielectric composition on self-heating effects. Specifically, we consider the impact of the thickness ratio of the SiO₂ and HfO₂ layers for different forms of the channel cross-section while under a constant equivalent gate oxide thickness. The influence of edge effects on the drain current was also examined. Furthermore, a comparative analysis of the Joule heating and heat dissipation within the transistor channel was conducted for different gate dielectric compositions. Contrary to expectations, the results demonstrate that increasing the total thickness of the dual-layer gate dielectric does not increase the channel temperature, but rather decreases it.