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<p>The fabricated Au/TiO<sub>2</sub>/n-Si (MIS) capacitor was exposed to radiation from a <sup>60</sup>Co gamma-ray source. Dielectric characteristics of the MIS capacitor, including the dielectric constant (ε'), dielectric loss (ε''), dielectric loss tangent (tanδ), ac electrical conductivity (σ<sub>ac</sub>), and both the real (M') and imaginary (M'') parts of the complex electric modulus (M*), as well as the real (Z') and imaginary (Z'') parts of the complex impedance (Z*), were determined using capacitance (C) and conductance (G/ω) data measured at five frequencies (1, 10, 100, 500, and 1000&#xa0;kHz) after each irradiation dose (5, 10, 50, 100&#xa0;kGy). Results indicated that the value C and G/ω declined as the radiation dose amplified at each frequency. The dielectric constant also decreased with radiation dose, attributed to displacement damage and the creation of mobile charge carriers or dipolar molecules. The dielectric constant was high at low frequencies because of interfacial polarization. Impedance values increased with radiation dose due to reduced mobile charge carrier density. While the study does not conclusively prove the fabricated MIS capacitor’s suitability as a dosimeter or radiation sensor, its unique response to radiation indicates potential. Thus, the results should be interpreted cautiously with this limitation in mind.</p>

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Dielectric Characteristics of Gamma Irradiated MIS Capacitor with TiO2 Dielectric Film

  • 期刊论文

  • 发表日期：

    2025年9月30日

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  • M. İzdeş,
  • R. Ertuğrul Uyar,
  • A. Tataroğlu

摘要

The fabricated Au/TiO2/n-Si (MIS) capacitor was exposed to radiation from a 60Co gamma-ray source. Dielectric characteristics of the MIS capacitor, including the dielectric constant (ε'), dielectric loss (ε''), dielectric loss tangent (tanδ), ac electrical conductivity (σac), and both the real (M') and imaginary (M'') parts of the complex electric modulus (M*), as well as the real (Z') and imaginary (Z'') parts of the complex impedance (Z*), were determined using capacitance (C) and conductance (G/ω) data measured at five frequencies (1, 10, 100, 500, and 1000 kHz) after each irradiation dose (5, 10, 50, 100 kGy). Results indicated that the value C and G/ω declined as the radiation dose amplified at each frequency. The dielectric constant also decreased with radiation dose, attributed to displacement damage and the creation of mobile charge carriers or dipolar molecules. The dielectric constant was high at low frequencies because of interfacial polarization. Impedance values increased with radiation dose due to reduced mobile charge carrier density. While the study does not conclusively prove the fabricated MIS capacitor’s suitability as a dosimeter or radiation sensor, its unique response to radiation indicates potential. Thus, the results should be interpreted cautiously with this limitation in mind.