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<p>In this study, a Double Gate (DG) Junction Less (JL) Vertical Tunnel FET(VTFET) structure with GaAs as Channel material is designed with catalytic metals as gate contacts and analyzed using Silvaco ATLAS TCAD simulation software for ammonia gas sensing. The vertical double-sided gate architecture provides better gate controllability over conventional TFETs for band-to-band tunneling (BTBT). Here GaAs is introduced in the channel which improves device sensitivity performance because of its rich physics like high electron mobility, and high band gap compared to more conventional semiconductor Silicon. P + pockets are created near the source region by using work function values and n-type doping of 1 × 10<sup>19</sup>&#xa0;cm<sup>−3</sup> is used in the channel region. The n-channel JL VTFET with Cobalt (Co) and Molybdenum (Mo) metals as gate contacts are analyzed for ammonia gas sensing. Characteristics of the proposed device structure are studied considering the electric field, surface potential, energy band diagram, and I<sub>d</sub>-V<sub>g</sub>&#xa0;characteristics curves by taking into account the adsorption of gas molecules. Due to the presence of gas on the gate metal, the work function changes which varies the Off-current (I<sub>off</sub>), On-current (I<sub>on</sub>), and threshold voltage (V<sub>th</sub>) as these are considered as sensitivity parameters for sensing ammonia gas molecules. The length of the channel and the dielectric materials are also varied to see the change in sensitivities of the device. While comparing Silicon and GaAs-based DG JL VTFET gas sensor the simulation results demonstrate that the sensitivity, on/off current ratio of the GaAs-based device increases by varying the work function of catalytic metal gates cobalt and molybdenum by 50, 100, 150, and 200&#xa0;meV.</p>

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Design and Performance Analysis of GaAs-based DG JL VTFET for Ammonia Gas Sensing

  • 期刊论文

  • 发表日期：

    2025年8月22日

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  • Sajjad Hossain,
  • Zahid Hasan

摘要

In this study, a Double Gate (DG) Junction Less (JL) Vertical Tunnel FET(VTFET) structure with GaAs as Channel material is designed with catalytic metals as gate contacts and analyzed using Silvaco ATLAS TCAD simulation software for ammonia gas sensing. The vertical double-sided gate architecture provides better gate controllability over conventional TFETs for band-to-band tunneling (BTBT). Here GaAs is introduced in the channel which improves device sensitivity performance because of its rich physics like high electron mobility, and high band gap compared to more conventional semiconductor Silicon. P + pockets are created near the source region by using work function values and n-type doping of 1 × 1019 cm−3 is used in the channel region. The n-channel JL VTFET with Cobalt (Co) and Molybdenum (Mo) metals as gate contacts are analyzed for ammonia gas sensing. Characteristics of the proposed device structure are studied considering the electric field, surface potential, energy band diagram, and Id-Vg characteristics curves by taking into account the adsorption of gas molecules. Due to the presence of gas on the gate metal, the work function changes which varies the Off-current (Ioff), On-current (Ion), and threshold voltage (Vth) as these are considered as sensitivity parameters for sensing ammonia gas molecules. The length of the channel and the dielectric materials are also varied to see the change in sensitivities of the device. While comparing Silicon and GaAs-based DG JL VTFET gas sensor the simulation results demonstrate that the sensitivity, on/off current ratio of the GaAs-based device increases by varying the work function of catalytic metal gates cobalt and molybdenum by 50, 100, 150, and 200 meV.