High Temperature Inhibits Light-induced Phase Separation of All-inorganic Halogen Perovskite CsPbBrxCl3-x
摘要
Metal halide perovskites (MHPs) have garnered significant attention as promising luminescent candidates due to their tunable band gaps, high color purity with narrow emission linewidths, high carrier mobility, and high photoluminescence quantum yield (PLQY). To date, red and green perovskite light-emitting diodes (LEDs) have achieved remarkable efficiency, boasting external quantum efficiencies (EQEs) exceeding 20%. In contrast, blue perovskite LEDs have fallen behind in terms of both efficiency and stability, which poses a significant barrier to their application in lighting and display. Currently, a straightforward strategy for achieving blue light emission in perovskites involves using thin-film devices with a tunable bandgap based on a mixture of chlorine (Cl) and bromine (Br) halogens. However, this approach is challenged by phase separation under the influence of light and electric fields. In this study, we tackle the critical issue of phase separation by light-induced in hybrid halide perovskites. Furthermore, we demonstrate the spectrally stable in blue perovskite films with a broad emission wavelength range of 428 to 452 nm by introducing a simple and practical method that involves annealing all-inorganic halogen perovskite films in air at high temperatures. This temperature (350 °C) is much higher than the annealing temperature common in the current literature (80–120 °C). Moreover, we used N-type silicon with superior thermal conductivity as the substrate. Silicon with superior thermal conductivity not only mitigates the adverse effects in low-conductivity glass substrates at elevated temperatures, but also facilitates direct device integration for future applications. This high-temperature annealing process reduces grain boundaries and defect density, thereby inhibiting the migration of halogen ions and effectively preventing phase separation.