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<p>This study investigates the design and application of a Centrifugal Cusp Magnetic Field (CMF) system, with a focus on its influence on melt flow during the Czochralski (CZ) crystal growth process. The CMF system comprises two cylindrical coils with hollow copper elements, cooled by a water-cooling system, and surrounded by an iron shield to control stray magnetic fields. The system's performance is analyzed through simulations based on Maxwell’s equations, with a multifrontal massively parallel sparse direct (MUMPS) solver used to solve the governing equations. The simulation model is validated by experimental measurements, demonstrating good agreement between simulated and measured magnetic flux densities. Key findings include the influence of magnetic shield thickness and shape on the magnetic flux distribution, with a notable impact on the stability and uniformity of the magnetic field. Application of the CMF to the CZ puller revealed that the induced Lorentz force suppresses natural convection currents in the molten silicon, reducing melt flow speed from 1.6&#xa0;cm/s to 1.1&#xa0;cm/s and improving the uniformity of temperature distribution. These results underscore the potential of CMF systems for enhancing the stability of melt flow and temperature in semiconductor manufacturing, with implications for optimized crystal growth processes.</p>

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Design and Optimization of a Centrifugal Cusp Magnetic Field System for Enhanced Melt Flow Control in the Czochralski Process

  • 期刊论文

  • 发表日期：

    2025年8月7日

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  • Amir Reza Ansari Dezfoli,
  • Swami Nath Maurya

摘要

This study investigates the design and application of a Centrifugal Cusp Magnetic Field (CMF) system, with a focus on its influence on melt flow during the Czochralski (CZ) crystal growth process. The CMF system comprises two cylindrical coils with hollow copper elements, cooled by a water-cooling system, and surrounded by an iron shield to control stray magnetic fields. The system's performance is analyzed through simulations based on Maxwell’s equations, with a multifrontal massively parallel sparse direct (MUMPS) solver used to solve the governing equations. The simulation model is validated by experimental measurements, demonstrating good agreement between simulated and measured magnetic flux densities. Key findings include the influence of magnetic shield thickness and shape on the magnetic flux distribution, with a notable impact on the stability and uniformity of the magnetic field. Application of the CMF to the CZ puller revealed that the induced Lorentz force suppresses natural convection currents in the molten silicon, reducing melt flow speed from 1.6 cm/s to 1.1 cm/s and improving the uniformity of temperature distribution. These results underscore the potential of CMF systems for enhancing the stability of melt flow and temperature in semiconductor manufacturing, with implications for optimized crystal growth processes.