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<p>This study aims to improve the dielectric and structural properties of polyvinyl alcohol (PVA)/chitosan(CS)/silicon dioxide (SiO<sub>2</sub>)/tungsten carbide (WC) nanostructures for flexible pressure sensor application. The (PVA-CS/SiO<sub>2</sub>-WC) films were fabricated by utilizing casting process. The results indicated that high distribution of SiO<sub>2</sub>-WC NPs inside the PVA-CS medium and excellent incorporation between SiO<sub>2</sub>-WC NPs and PVA-CS matrix. The dielectric properties findings showed that an increase in the dielectric parameters of PVA-CS with an increase in the SiO<sub>2</sub>-WC nanoparticles content. The dielectric constant(ε′) and (σ<sub>A.C</sub>) of PVA-CS increased about 58% and 66.5% with low values of dielectric loss(ε′′) ranged from 0.193 to 0.581 at 100 Hz, this result indicates that the (PVA-CS/SiO<sub>2</sub>-WC) nanocomposites are suitable for diverse nanoelectronics applications. The dielectric characteristics of (PVA-CS/SiO<sub>2</sub>-WC) nanocomposites were changed with an increase in frequency. The final results showed the PVA-CS/SiO<sub>2</sub>-WC nanostructures exhibit superior pressure sensitivity, exceptional flexibility, and strong environmental resilience compared with other sensors.</p>

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Synthesis and Ameliorating the Features of PVA-CS/SiO2-WC Futuristic Films For Pressure Sensor Applications

  • 期刊论文

  • 发表日期：

    2025年8月8日

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  • Wissam Obeis Obaid,
  • Ahmed Hashim,
  • Bahaa H. Rabee

摘要

This study aims to improve the dielectric and structural properties of polyvinyl alcohol (PVA)/chitosan(CS)/silicon dioxide (SiO2)/tungsten carbide (WC) nanostructures for flexible pressure sensor application. The (PVA-CS/SiO2-WC) films were fabricated by utilizing casting process. The results indicated that high distribution of SiO2-WC NPs inside the PVA-CS medium and excellent incorporation between SiO2-WC NPs and PVA-CS matrix. The dielectric properties findings showed that an increase in the dielectric parameters of PVA-CS with an increase in the SiO2-WC nanoparticles content. The dielectric constant(ε′) and (σA.C) of PVA-CS increased about 58% and 66.5% with low values of dielectric loss(ε′′) ranged from 0.193 to 0.581 at 100 Hz, this result indicates that the (PVA-CS/SiO2-WC) nanocomposites are suitable for diverse nanoelectronics applications. The dielectric characteristics of (PVA-CS/SiO2-WC) nanocomposites were changed with an increase in frequency. The final results showed the PVA-CS/SiO2-WC nanostructures exhibit superior pressure sensitivity, exceptional flexibility, and strong environmental resilience compared with other sensors.