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<p>Short-channel effects (SCEs) significantly impact the performance of MOSHEMTs by degrading their electrostatic control and increasing leakage currents. Physics-based and charge-based models are useful to comprehend the physical charge flow mechanism along the channel in AlGaN/GaN metal-oxide semiconductors (MOSHEMTs). An innovative double π-gate engineering technique is proposed for short channel devices to address surface potential ambiguities and peak electric field phenomenon in the channel. To suppress surface traps, deep-level traps, and hot electron trapping/de-trapping in the gate-drain access region, a double layer of high-k insulators of Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> is implemented. The proposed structure reduces the negative hysteresis at high drain bias. The proposed structure also trades off the traps by peak electric field redistribution and reducing hot electrons. It also offers the cut-off frequency (f<sub>T</sub>)/maximum operating frequency (f<sub>max</sub>) of 363/461&#xa0;GHz respectively.</p>

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Comprehensive Investigation of influence of Short Channel Effects in Al2O3/HfO2 AlGaN/GaN MOSHEMTs

  • 期刊论文

  • 发表日期：

    2025年7月22日

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  • Rayabarapu Venkateswarlu,
  • Bibhudendra Acharya,
  • Ashish Kumar,
  • Guru Prasad Mishra

摘要

Short-channel effects (SCEs) significantly impact the performance of MOSHEMTs by degrading their electrostatic control and increasing leakage currents. Physics-based and charge-based models are useful to comprehend the physical charge flow mechanism along the channel in AlGaN/GaN metal-oxide semiconductors (MOSHEMTs). An innovative double π-gate engineering technique is proposed for short channel devices to address surface potential ambiguities and peak electric field phenomenon in the channel. To suppress surface traps, deep-level traps, and hot electron trapping/de-trapping in the gate-drain access region, a double layer of high-k insulators of Al2O3/HfO2 is implemented. The proposed structure reduces the negative hysteresis at high drain bias. The proposed structure also trades off the traps by peak electric field redistribution and reducing hot electrons. It also offers the cut-off frequency (fT)/maximum operating frequency (fmax) of 363/461 GHz respectively.