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<p>This paper investigates the working functionality of six-transistor static random-access memory (6&#xa0;T-SRAM) using silicon nanotube-tunnel field-effect transistors (SiNT-TFETs) and also analyses the static noise margin of the SiNT-TFET SRAM. The extracted values of static noise margin metrics of SiNT-TFET SRAM, such as HOLD, READ, and WRITE SNM are 300&#xa0;mV, 200&#xa0;mV and 400&#xa0;mV respectively. Apart from the above analysis, the single-event transient (SET) on the SiNT-TFET device is studied for normal incidence. Furthermore, the single-event upset (SEU) is analysed on the SiNT-TFET SRAM during heavy ion irradiation. The SET study shows that the channel-drain junction is the most sensitive region to radiation strikes for normal incidence. The SiNT-TFET SRAM flipped the content for a minimum linear energy threshold (LET<sub>TH</sub>) value of 50&#xa0;MeV/mg/cm<sup>2</sup>.</p>

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Investigation of Heavy-ion impact on Silicon Nanotube Tunnel FET SRAM

  • 期刊论文

  • 发表日期：

    2025年7月26日

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  • A. Nisha Justeena,
  • P. Rajendiran,
  • Jihene Mrabet,
  • Swaroop Ramasamy,
  • D. Nirmal

摘要

This paper investigates the working functionality of six-transistor static random-access memory (6 T-SRAM) using silicon nanotube-tunnel field-effect transistors (SiNT-TFETs) and also analyses the static noise margin of the SiNT-TFET SRAM. The extracted values of static noise margin metrics of SiNT-TFET SRAM, such as HOLD, READ, and WRITE SNM are 300 mV, 200 mV and 400 mV respectively. Apart from the above analysis, the single-event transient (SET) on the SiNT-TFET device is studied for normal incidence. Furthermore, the single-event upset (SEU) is analysed on the SiNT-TFET SRAM during heavy ion irradiation. The SET study shows that the channel-drain junction is the most sensitive region to radiation strikes for normal incidence. The SiNT-TFET SRAM flipped the content for a minimum linear energy threshold (LETTH) value of 50 MeV/mg/cm2.