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<p>In this work, we investigated a novel In<sub>0.22</sub>Al<sub>0.2</sub>Ga<sub>0.58</sub>As/In<sub>0.53</sub>Ga<sub>0.47</sub>As high electron mobility transistors (HEMTs) on silicon substrates for future high speed logic applications. Our research found that incorporating InAlGaAs as sub-cap and barrier layers significantly enhances electrostatic integrity. We also examined the impact of lateral scaling on the logic performance of these novel HEMTs, focusing on short channel effects and RF performance. The device demonstrated excellent RF performance, with a high maximum drain current (I<sub>D,MAX</sub>) of 3.46&#xa0;mA/µm at gate source voltage (V<sub>GS</sub>) of 0.5&#xa0;V, source-drain resistance (R<sub>SD</sub>) of 137 Ω.µm, maximum transconductance (g<sub>m,max</sub>) of 4.64 mS/µm, and a cutoff frequency (f<sub>T</sub>) of 183.5&#xa0;GHz at drain to source voltage (V<sub>DS</sub>) of 0.5&#xa0;V for L<sub>g</sub> = 30&#xa0;nm. These findings represent the highest performance reported for InGaAs HEMTs on silicon substrates with approximately the same gate length.</p>

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Lateral Scaling of In0.22Al0.2Ga0.58As/ In0.53Ga0.47As HEMTs on Si Substrate for RF Application

  • 期刊论文

  • 发表日期：

    2025年4月5日

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  • Chumki Das,
  • Kaushik Mazumdar

摘要

In this work, we investigated a novel In0.22Al0.2Ga0.58As/In0.53Ga0.47As high electron mobility transistors (HEMTs) on silicon substrates for future high speed logic applications. Our research found that incorporating InAlGaAs as sub-cap and barrier layers significantly enhances electrostatic integrity. We also examined the impact of lateral scaling on the logic performance of these novel HEMTs, focusing on short channel effects and RF performance. The device demonstrated excellent RF performance, with a high maximum drain current (ID,MAX) of 3.46 mA/µm at gate source voltage (VGS) of 0.5 V, source-drain resistance (RSD) of 137 Ω.µm, maximum transconductance (gm,max) of 4.64 mS/µm, and a cutoff frequency (fT) of 183.5 GHz at drain to source voltage (VDS) of 0.5 V for Lg = 30 nm. These findings represent the highest performance reported for InGaAs HEMTs on silicon substrates with approximately the same gate length.