Scholarlink

<p>Copper (Cu)-doped Zinc Oxide (ZnO)-Graphene Oxide (GO) nanostructures (0, 0.5, 1, and 2 at.%) were synthesized via hydrothermal methods and deposited on silicon substrates using spin coating. XRD analysis revealed well-crystallized ZnO nanoparticles with crystallite sizes between 79 and 108&#xa0;nm, while Cu doping induced lattice distortions, reflected by increased microstrain and dislocation density. AFM measurements showed a reduction in surface roughness and improved homogeneity with Cu doping. Optical characterizations indicated a reduction in the band gap (from 3.26&#xa0;eV to 3.24&#xa0;eV) and a decrease in photoluminescence intensity of the visible band, suggesting degradation of recombination sites. Reflectance measurements confirmed enhanced light absorption with higher Cu doping. Carrier lifetime increased significantly, reaching 165&#xa0;μs at 2% Cu doping, highlighting improved charge carrier dynamics. These results demonstrate that Cu-doped ZnO-GO nanocomposites are promising candidates for enhanced surface passivation in silicon-based photovoltaic devices.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Advancing Silicon Surface Passivation by Copper Doped Zinc Oxide and Graphene Oxide Nanocomposite Thin Films

  • 期刊论文

  • 发表日期：

    2025年3月11日

查看全文
  • Moez Salem,
  • Amel Haouas,
  • Abdullah Almohammedi,
  • Hajar Ghannam

摘要

Copper (Cu)-doped Zinc Oxide (ZnO)-Graphene Oxide (GO) nanostructures (0, 0.5, 1, and 2 at.%) were synthesized via hydrothermal methods and deposited on silicon substrates using spin coating. XRD analysis revealed well-crystallized ZnO nanoparticles with crystallite sizes between 79 and 108 nm, while Cu doping induced lattice distortions, reflected by increased microstrain and dislocation density. AFM measurements showed a reduction in surface roughness and improved homogeneity with Cu doping. Optical characterizations indicated a reduction in the band gap (from 3.26 eV to 3.24 eV) and a decrease in photoluminescence intensity of the visible band, suggesting degradation of recombination sites. Reflectance measurements confirmed enhanced light absorption with higher Cu doping. Carrier lifetime increased significantly, reaching 165 μs at 2% Cu doping, highlighting improved charge carrier dynamics. These results demonstrate that Cu-doped ZnO-GO nanocomposites are promising candidates for enhanced surface passivation in silicon-based photovoltaic devices.