<p>The transformation of closed linear zones in the process of thermomigration is associated with the difference in the conditions of dissolution of an anisotropic crystal on the outer and inner contours of the zone. The connection of linear zones changes the dissolution conditions on these contours and affects the shape of the zone and the resulting epitaxial channel. Using the example of the silicon-aluminum system, the effect of connecting a segment of a linear zone at right angles with zones of various shapes: circular, square and rectilinear on their transformation when passing through a silicon wafer (100) was experimentally studied. It was found that the adjacency from inside the closed zone does not affect its transformation, and the adjacency from the outside eliminates the characteristic transformation, ensures the migration of the zone in the direction of the temperature gradient and causes a possible rupture of the zone at the adjacency. For a rectilinear zone, the adjacency causes the zone to shift towards the adjacent segment. An explanation of the mechanism of the detected effect is given, based on taking into account the vector nature of the forces of resistance to movement in various sections of the dissolution front of the zone.</p>

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The effect of the Connection of Linear Zones on their Transformation during Thermomigration through a Silicon Wafer (100)

  • Boris M. Seredin,
  • Victor P. Popov,
  • Alexander V. Malibashev,
  • Artem D. Stepchenko,
  • Marina B. Zinenko

摘要

The transformation of closed linear zones in the process of thermomigration is associated with the difference in the conditions of dissolution of an anisotropic crystal on the outer and inner contours of the zone. The connection of linear zones changes the dissolution conditions on these contours and affects the shape of the zone and the resulting epitaxial channel. Using the example of the silicon-aluminum system, the effect of connecting a segment of a linear zone at right angles with zones of various shapes: circular, square and rectilinear on their transformation when passing through a silicon wafer (100) was experimentally studied. It was found that the adjacency from inside the closed zone does not affect its transformation, and the adjacency from the outside eliminates the characteristic transformation, ensures the migration of the zone in the direction of the temperature gradient and causes a possible rupture of the zone at the adjacency. For a rectilinear zone, the adjacency causes the zone to shift towards the adjacent segment. An explanation of the mechanism of the detected effect is given, based on taking into account the vector nature of the forces of resistance to movement in various sections of the dissolution front of the zone.