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<p>This work investigates the recombination characteristics of surface and bulk of industrial monocrystalline (c-Si) and multicrystalline (mc-Si) silicon wafers subjected to illuminated annealing at 75&#xa0;°C. Variations in open circuit photoluminescence (PL) intensity and effective lifetime reveal that the degradation and regeneration behavior of the samples varies based on the bulk quality. The regeneration in PL intensity and effective minority carrier lifetime is relatively lower in mc-Si samples than in c-Si samples due to the high density of bulk defects. Further, the analysis of surface and bulk recombination characteristics reveals that the response of emitter surface and bulk are different during illuminated annealing. The bulk component dominates overall recombination characteristics and subsequently affects the performance parameters of the solar cells. It shows an initial degradation within 24&#xa0;h followed by regeneration as light soaking duration increases. In contrast, light soaking beyond 24&#xa0;h resulted in higher surface recombination in c-Si samples, indicating the possible formation of LeTID defects. However, no such degradation in the emitter surface is observed in mc-Si even after light soaking for 125&#xa0;h, suggesting the absence of LeTID-related defect formation at the emitter surface. The observed trend in quantum efficiency (QE) agrees with the recombination parameters at the surface and within the bulk of the device.</p>

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Comprehensive Analysis of Recombination Characteristics Due to Illumination Under Elevated Temperature in Monocrystalline and Multicrystalline Wafers

  • 期刊论文

  • 发表日期：

    2025年2月19日

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  • E. Resmi,
  • K. P. Sreejith,
  • Anil Kottantharayil

摘要

This work investigates the recombination characteristics of surface and bulk of industrial monocrystalline (c-Si) and multicrystalline (mc-Si) silicon wafers subjected to illuminated annealing at 75 °C. Variations in open circuit photoluminescence (PL) intensity and effective lifetime reveal that the degradation and regeneration behavior of the samples varies based on the bulk quality. The regeneration in PL intensity and effective minority carrier lifetime is relatively lower in mc-Si samples than in c-Si samples due to the high density of bulk defects. Further, the analysis of surface and bulk recombination characteristics reveals that the response of emitter surface and bulk are different during illuminated annealing. The bulk component dominates overall recombination characteristics and subsequently affects the performance parameters of the solar cells. It shows an initial degradation within 24 h followed by regeneration as light soaking duration increases. In contrast, light soaking beyond 24 h resulted in higher surface recombination in c-Si samples, indicating the possible formation of LeTID defects. However, no such degradation in the emitter surface is observed in mc-Si even after light soaking for 125 h, suggesting the absence of LeTID-related defect formation at the emitter surface. The observed trend in quantum efficiency (QE) agrees with the recombination parameters at the surface and within the bulk of the device.