Morphological and Structural Investigation of Porous Silicon Layers Obtained under Magnetic Field
摘要
Due to its good physical and chemical properties, porous silicon (PSi) is a highly favored element for several applications. In this paper, we report an evaluation of the structural and morphological layers of porous silicon of a 111-oriented N-doped silicon substrate created via electrochemical etching under the effect of a magnetic field. The electrochemical technique enabled meticulous regulation of porous silicon characteristics, including average pore diameter range from 0.094 μm to 2.31 μm, average pore depths range between 21.14 μm and 42.87 μm, and porosity from 37.53 μm to 69.74%. The influence of the magnetic field on the morphological structure and optical properties of porous silicon layers was assessed using various analytical approaches, including the Fourier Transform Infrared (FTIR) spectroscopy, scanning Electron Microscopy (SEM), and (PL) spectroscopy. The impact of magnetic fields on the morphology of porous silicon layers is a compelling research subject investigating how magnetic fields can alter the structural properties of porous silicon.