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<p>The X-ray diffraction method confirmed the presence of a three-phase state of oxygen in a growing single crystal of silicon grown by the Czochralski method: a state freely dissolved along the interstices of the matrix lattice in the form of “quasi-molecules”—SiO<sub>2</sub> and a precipitate state in the composition of crystalline silicon dioxide—SiO<sub>2</sub>(c) in the volume of the sample, and on surface of a single crystal in the amorphous form of dioxide – SiO<sub>2</sub>(a). The radiation-stimulated transformation of oxygen atoms between dissolved and crystalline impurity phase states of oxygen in the bulk of a single crystal has been established. A new physical mechanism for the stability of the intrinsic (diamond-like) crystal structure of a growth silicon single crystal to neutron irradiation is proposed.</p>

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Radiation-Stimulated Transformation of Cxygen Atoms Between Impurity Phase States of A Growing Silicon Single Crystal

  • 期刊论文

  • 发表日期：

    2025年2月14日

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  • Mahmud Kalanov,
  • Ilkham Sadikov,
  • Shavkat Malikov,
  • Avas Khugaev,
  • Abror Korakhodjaev,
  • Amin Saidov,
  • Shukrillo Usmonov,
  • Dadajan Saparov

摘要

The X-ray diffraction method confirmed the presence of a three-phase state of oxygen in a growing single crystal of silicon grown by the Czochralski method: a state freely dissolved along the interstices of the matrix lattice in the form of “quasi-molecules”—SiO2 and a precipitate state in the composition of crystalline silicon dioxide—SiO2(c) in the volume of the sample, and on surface of a single crystal in the amorphous form of dioxide – SiO2(a). The radiation-stimulated transformation of oxygen atoms between dissolved and crystalline impurity phase states of oxygen in the bulk of a single crystal has been established. A new physical mechanism for the stability of the intrinsic (diamond-like) crystal structure of a growth silicon single crystal to neutron irradiation is proposed.