Effect of Annealing on the Pyro-Phototronic Behaviour in Al/nanostructured PS-ML: p⁺-Si Schottky Photovoltaic Device

In the present study, effect of annealing in Al/nanostructured porous silicon multilayer (PS-ML): p⁺-Si Schottky photovoltaic device is observed for the behavioural change in its pyro-phototronic and corresponding photovoltaic effect. Under UV (365 nm) illumination condition, the as-prepared device shows maximum enhancement and increment factor of 31.16% and 186% at \(0.5V\) $0.5V$ compared to the devices annealed at temperatures \(50^\circ C\) ${50}^{\circ }C$ and \(100^\circ C\) ${100}^{\circ }C$ respectively. However, the coupling between pyro-phototronic and photovoltaic effect remains effective only for the device annealed up to \(100^\circ C\) ${100}^{\circ }C$ . On further elevating the annealing temperature to \(150^\circ C\) ${150}^{\circ }C$ , the pyro-phototronic effect diminishes while photovoltaic is still retained. The device treated at \(150^\circ C\) ${150}^{\circ }C$ shows enhancement in open circuit voltage ( \({V}_{oc}\) $V_{\mathit{oc}}$ ) value of \(\pm 841 mV\) $\pm 841mV$ with large value of fill factor (FF) of \(27\%\) $27\%$ and power conversion efficiency (PCE) of \(9.63\%\) $9.63\%$ and \(6.36\%\) $6.36\%$ for upward and downward poling respectively. While on elevating the annealing temperature to \(200^\circ C\) ${200}^{\circ }C$ , device performance degrades.