Effect of SiGe-Composite Placement on Quantum Effects of a Nanowire FET Using NEGF

In this work, SiGe composite/Ge/Si heterostructure-based junctionless nanowire transistor is investigated. To minimise the lattice mismatch, the composition of Ge is kept at 0.45. Various heterostructures examined are Si_1-xGe_XGeSi, GeSi_1-xGe_XSi, Si_1-xGe_XSiGe, and GeSiSi_1-XGe_X. For simulation, the Schrodinger–Poisson equation is used to form a Hamiltonian matrix, and to enhance the accuracy of the results, non-equilibrium Green’s function is used to calculate the transport parameters. Different characteristics examined are band energy, transmission probability, and density of states at the source and drain electrodes. The findings demonstrate that the Ge-Si–Si_0.45Ge_0.55 configuration exhibits the best I_DS -V_GS Characteristics with high I_ON/I_OFF ratio and steep subthreshold swing, indicating its potential for future low-power electronic applications.