Synthesis of PMMA/PEG/SiO₂/SiC Multifunctional Nanostructures and Exploring the Microstructure and Dielectric Features for Flexible Nanodielectric Applications

This study intends to improve the dielectric properties of PMMA/PEG/SiO₂/SiC nanostructures for use in flexible pressure sensors and electrical nanodevices. PMMA/PEG films and PMMA/PEG films doped with SiO₂ and SiC NPs were created using a casting technique. The structural properties of PMMA/PEG/SiO₂/SiC nanostructures were examined using FTIR and an optical microscope. The dielectric properties were assessed using an LCR meter across a frequency range from 100 Hz to 5 MHz. The analysis of the structural features of PMMA/PEG/SiO₂/SiC nanostructures showed a significant presence of SiO₂ and SiC nanoparticles in the PMMA/PEG material and strong integration between SiO₂ and SiC nanoparticles and the PMMA/PEG matrix. The dielectric properties showed an increase in the dielectric parameters of PMMA/PEG as the concentration of SiO₂-SiC NPs increased. The dielectric constant and AC electrical conductivity of PMMA/PEG rose by approximately 39% and 49%, respectively, with low dielectric loss values ranging from 0.14 to 0.275 at 100 Hz. These findings suggest that PMMA/PEG/SiO₂/SiC nanostructures may be suitable for a variety of nanoelectronics applications. The dielectric properties of PMMA/PEG/SiO₂/SiC nanostructures changed as the frequency increased. The structure and dielectric properties of the PMMA/PEG/SiO₂/SiC nanostructures suggest they can be used in a variety of flexible nanoelectronics applications due to their low-cost, high-energy storage capability, and minimal energy loss. An investigation was conducted on the pressure sensor application of PMMA/PEG/SiO₂/SiC nanostructures. The results indicated that the PMMA/PEG/SiO₂/SiC nanostructures exhibit high sensitivity to pressure, exceptional flexibility, and strong environmental resilience in comparison to other sensors.