Vertical Double Gate Si-Ge Heterojunction Dopingless TFET Based on Charge Plasma Concept for Enhanced Analog Performance

This article investigates a vertically grown double gate silicon channel and germanium source dopingless TFET using the charge plasma concept for enhanced analog performance. The germanium layer used in the underlap region significantly improves device characteristics. For studying the DC performance, analog/RF performance and various non-idealities of the Vertical Si-Ge Heterojunction Dopingless (VHJDL) TFET device calibrated numerical simulator is employed. Moreover, the device performance is examined by varying the different structural parameters, and parasitic phenomena are investigated. The simulated results exhibited that VHJDL TFET device can achieve desirable analog and digital performance such as I_ON as high as \(\approx\) $\approx$ 80µA/µm along with an I_ON/I_OFF ratio of 6.784 × 10¹² and a cut-off frequency (f_T) being equal to 64.7 GHz.