Effect of Silicon Nitride Coated Carbon Crucible on Multi-Crystalline Silicon Ingot during Directional Solidification Process: Numerical Simulation

Numerical simulation has been carried out on the directional solidification (DS) for the growth of multi-crystalline silicon (mc-Si) ingot through a 2-dimensional axis-symmetric global transient model. In this work, we used a silicon nitride-coated carbon crucible DS system. Due to this, the thermal conductivity and density of the crucible are changed which may affect the furnace's thermal field. Changes in the thermal field can impact the temperature distribution, von Mises stress, maximum shear stress, normal stresses, average growth rate, and power consumption. Using numerical simulation based on the finite volume method the solidification process is analyzed and investigated with a silicon nitride-coated carbon crucible (modified system) and silicon nitride-coated quartz crucible (conventional system). Solar cell performance depends directly on the quality of the mc-Si ingot. The modified grown ingot is more favorable for PV applications.