Thermally Stimulated Transformation of Oxygen Atoms Between Phase States in a Silicon Single Crystal
摘要
The high-temperature X-ray diffraction method showed the presence of two phase states of oxygen in the volume of a single crystal of silicon grown by the Czochralski method: a dissolved (interstitial) state in the composition of “quasimolecules”—SiO2 and a chemically bound (precipitate) state in the composition of silicon dioxide—SiO2; the precipitate state of oxygen in the bulk of silicon is in the form of crystalline SiO2(c), and in the near-surface layer of a single crystal in the amorphous form of SiO2(a). The thermally stimulated transformation of oxygen atoms between dissolved and precipitate states of oxygen in crystalline form in the bulk of a silicon single crystal has been established.