Recent Frontiers in Anisotropic Wet Chemical Etching Techniques for Precision Surface Modification of Industrial-Grade Bulk Crystalline Silicon Wafers: Enhancing Performance in Photovoltaics and MEMS Devices

Surface treatment is a pivotal technique for enhancing the properties of industrial-grade bulk c-silicon wafers, revolutionizing their applicability in both PV and MEMS applications. In this paper we presents a brief overview of recent advancements in anisotropic etching methodologies, elucidating their role in tailoring surface morphology, roughness, and texturing of silicon wafers with precision and control. Fundamental insights into the chemical reactions governing the anisotropic etching process are explored, highlighting its capacity to produce intricate surface structures beneficial for light management in PV cells and optimized mechanical characteristics for MEMS devices. Encompassing diverse anisotropic etching solutions and their effects on surface morphology, addressing the intricate interplay between etchant composition, temperature, and process duration. Strategies for achieving superior selectivity, reproducibility, and uniformity across large-scale silicon wafers are discussed, elucidating the nuanced control required for industrial implementation.