Impact of Variation in Fin Thickness and Self-Heating on the Output Characteristics of Triangular Gate FinFETs

The self-heating effect (SHE) poses a significant obstacle for ultra-scaled devices, including Fin Field Effect Transistors (FinFETs) designed for sub-nanometer technology. This study investigates the impact of variations in fin thickness and self-heating on the output characteristics of Triangular Gate FinFETs (TG-FinFET) and the resulting lattice temperature. The effect of modifications in various dimensions and self-heating on the output properties and lattice temperature of FinFET devices is examined. This work examines the impacts of Self-Heating Effects (SHEs) on the average electron velocity and mobility. According to the findings, SHE causes an average electron velocity decrease and an average electron mobility deterioration of on average. The findings of this research will contribute to the development of more advanced and efficient FinFET designs.