This study introduces a novel double-dielectric Si/GaSb heterojunction TFET, incorporating III-V material in the pockets and source region to enhance band-to-band tunneling. Utilizing a high- \(\kappa \) dielectric in conjunction with \(\varvec{SiO_2}\) as a gate oxide, the proposed TFET demonstrates notable advancements, including an 81% reduction in OFF-current and a substantial 1.58-decade enhancement in ON-current. However, a moderate 30% increase in the average subthreshold swing is observed compared to the referenced pocket-based GaSb/Si VTFET. The RF characteristics reveal a significant 1.62-decade increase in transconductance and a 1.8-decade increase in output conductance, coupled with impressive cut-off frequency and gain-bandwidth product relative to the same reference. Additionally, the study implements a 7T SRAM cell at the device-to-circuit level through a lookup table-based Verilog-A methodology. It showcases higher noise margins and lower delays, rendering it suitable for ultra-low voltage applications requiring high-speed performance and enhanced stability.
