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<p>Ruthenium (Ru)-based chalcogenide (S, Se) is a promising material in various fields, such as optics, photoelectrodes, and electrocatalysis, owing to its suitable bandgap for generating charge carriers under light illumination ranging from visible to near-infrared (NIR) and its high absorption coefficient. In this study, we report the synthesis of RuSe<sub>2</sub> thin films by chemical vapor deposition (CVD) with a bandgap matching the NIR region at 0.52&#xa0;eV. Further, we demonstrated RuS<sub>2<i>x</i></sub>Se<sub>2−2<i>x</i></sub> alloy films using the post-sulfurization process after CVD RuSe<sub>2</sub> with a tunable bandgap from 0.52 to 1.39&#xa0;eV depending on sulfur composition. Remarkably, RuS<sub>2<i>x</i></sub>Se<sub>2−2<i>x</i></sub> alloy film metal–semiconductor–metal (MSM) photodetector sulfurized at 500&#xa0;°C, with a 0.75&#xa0;eV bandgap, exhibits enhanced broad absorption across NIR spectral ranges, suppressed dark current and high photoresponsivity in NIR wavelengths range even at zero-bias. We believe the bandgap-tunable RuS<sub>2<i>x</i></sub>Se<sub>2−2<i>x</i></sub> thin film through an efficient deposition method could be suitable for various optoelectronic applications.</p> Graphical abstract <p></p>

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Near-infrared self-powered RuS2xSe2−2x alloy photodetector via chemical vapor deposition RuSe2 and post-sulfurization process

  • 期刊论文

  • 发表日期：

    2025年3月21日

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  • Jaehyeok Kim,
  • Hwi Yoon,
  • Inkyu Sohn,
  • Tatsuya Nakazawa,
  • Sangyoon Lee,
  • Donghyun Kim,
  • Yusuke Ohshima,
  • Hiroki Sato,
  • Seunggi Seo,
  • Sojeong Eom,
  • Seung-Min Chung,
  • Hyungjun Kim

摘要

Ruthenium (Ru)-based chalcogenide (S, Se) is a promising material in various fields, such as optics, photoelectrodes, and electrocatalysis, owing to its suitable bandgap for generating charge carriers under light illumination ranging from visible to near-infrared (NIR) and its high absorption coefficient. In this study, we report the synthesis of RuSe2 thin films by chemical vapor deposition (CVD) with a bandgap matching the NIR region at 0.52 eV. Further, we demonstrated RuS2xSe2−2x alloy films using the post-sulfurization process after CVD RuSe2 with a tunable bandgap from 0.52 to 1.39 eV depending on sulfur composition. Remarkably, RuS2xSe2−2x alloy film metal–semiconductor–metal (MSM) photodetector sulfurized at 500 °C, with a 0.75 eV bandgap, exhibits enhanced broad absorption across NIR spectral ranges, suppressed dark current and high photoresponsivity in NIR wavelengths range even at zero-bias. We believe the bandgap-tunable RuS2xSe2−2x thin film through an efficient deposition method could be suitable for various optoelectronic applications.

Graphical abstract