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<p>In the last few years, carrier-selective contacts (CSCs) have emerged as a new concept to reduce the fabrication complexities and losses associated with conventional doped p–n junction high-efficiency solar cells. III–V direct bandgap compound semiconductor-based ultrathin heterojunction solar cells have recently attracted significant attention due to efficient charge carrier collection, increased defect tolerance, photon recycling, reduced material usage, lower manufacturing costs, and flexibility. Here, we present a high-efficiency photovoltaic device utilizing a 280 nm thin InP absorber layer, incorporating both electron- and hole-selective contact layers to form a double-heterojunction structure. The device operation is numerically simulated using FDTD and CHARGE modules of the Lumerical software package. This structure reduces the epitaxial thickness, minimizes the cost, while achieving an open-circuit voltage (V<sub>OC</sub>) of 1.056 V and power conversion efficiency (PCE) of 28.54% under 1-Sun illumination. Further analysis indicates that a maximum efficiency of approximately 30% can be achieved under ideal solar cell conditions, assuming a bulk lifetime of 1 µs and a surface recombination velocity (SRV) of 10<sup>3</sup> cm/s. These results indicate enormous potential for the future development of InP-based solar cells with high efficiency and low cost of production.</p>

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Optoelectronic modeling of a thin-film InP solar cell with carrier-selective contacts and double antireflection coatings

  • 期刊论文

  • 发表日期：

    2026年7月10日

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  • Sumit Sagar,
  • Jitendra Kumar,
  • Amitesh Kumar,
  • Samrat Mukhopadhyay

摘要

In the last few years, carrier-selective contacts (CSCs) have emerged as a new concept to reduce the fabrication complexities and losses associated with conventional doped p–n junction high-efficiency solar cells. III–V direct bandgap compound semiconductor-based ultrathin heterojunction solar cells have recently attracted significant attention due to efficient charge carrier collection, increased defect tolerance, photon recycling, reduced material usage, lower manufacturing costs, and flexibility. Here, we present a high-efficiency photovoltaic device utilizing a 280 nm thin InP absorber layer, incorporating both electron- and hole-selective contact layers to form a double-heterojunction structure. The device operation is numerically simulated using FDTD and CHARGE modules of the Lumerical software package. This structure reduces the epitaxial thickness, minimizes the cost, while achieving an open-circuit voltage (VOC) of 1.056 V and power conversion efficiency (PCE) of 28.54% under 1-Sun illumination. Further analysis indicates that a maximum efficiency of approximately 30% can be achieved under ideal solar cell conditions, assuming a bulk lifetime of 1 µs and a surface recombination velocity (SRV) of 103 cm/s. These results indicate enormous potential for the future development of InP-based solar cells with high efficiency and low cost of production.