Optimization study of stripe width for P-AlGaN/GaN quantum structured cladding based blue laser diode with low input current density
摘要
This paper presents specifically a comprehensive study on the effect of the stripe width and confinement factor in ridge waveguide-based blue laser diodes with p-AlGaN/GaN quantum structures as cladding to optimize the output optical laser power. The work emphasizes the critical relationship between transverse and lateral confinement in the proposed design to better the output optical power. The highlight of the findings is that a lateral confinement factor reached near to 1, demonstrating effective lateral optical confinement within the quantum well, acting as an active region in the proposed laser diode. Upon optimization for the proposed design, the best stripe width value was found to be around 30 µm for achieving the highest optical power of the Laser diode. The optical power achieved out of the optimized 30 µm stripe width is around 12.8 W from the proposed design for 450 nm emission wavelength. This analysis underscores the necessity of proper optimization of the strip width with p-side superlattice cladding for a laser diode design to get a better tradeoff between applied input power and output optical power, with enhanced energy efficiency and beam quality, offering insights into optimizing stripe width for cutting-edge blue laser design technology.