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<p>In this work, the design of two infrared photodetectors in the SWIR range based on a PbS absorbent material and a graphene carrier transfer channel is reported, and the responsivity, response time, the effects of incident optical power, thickness of the absorbent layer and bias voltage are simulated via Lumerical ANSYS software. The first photodetector works on the basis of the photoconductive mechanism. The photoconductive detector exhibited the highest channel resistance and the lowest dark current, with a responsivity and rise time of 2.6&#xa0;A/W and 75 µs, respectively. The second structure is based on the photogating mechanism. The photogating detector yielded a responsivity of 500&#xa0;A/W and its response time was 100 µs. The photogating device exhibited higher noise due to its increased dark current. Hybrid graphene–PbS photodetector displays superior responsivity as well as reasonably fast response times, indicating their potential application in the high-performance SWIR area of optoelectronics and sensing.</p>

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Comparison between a photoconductive SWIR infrared photodetector and a graphene SWIR photogating photodetector: an analytical and simulation study

  • 期刊论文

  • 发表日期：

    2026年7月10日

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  • Mohammad Akbarshahjoughi,
  • Mahdi Khaje,
  • Abdollah Eslami majd

摘要

In this work, the design of two infrared photodetectors in the SWIR range based on a PbS absorbent material and a graphene carrier transfer channel is reported, and the responsivity, response time, the effects of incident optical power, thickness of the absorbent layer and bias voltage are simulated via Lumerical ANSYS software. The first photodetector works on the basis of the photoconductive mechanism. The photoconductive detector exhibited the highest channel resistance and the lowest dark current, with a responsivity and rise time of 2.6 A/W and 75 µs, respectively. The second structure is based on the photogating mechanism. The photogating detector yielded a responsivity of 500 A/W and its response time was 100 µs. The photogating device exhibited higher noise due to its increased dark current. Hybrid graphene–PbS photodetector displays superior responsivity as well as reasonably fast response times, indicating their potential application in the high-performance SWIR area of optoelectronics and sensing.