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<p>Lead-free perovskite solar cells (PSCs) are attracting growing interest for sustainable photovoltaic applications. In this work, the photovoltaic potential of Cs<sub>2</sub>GeSnCl<sub>6</sub> is investigated using SCAPS-1D simulation. A broad set of device structures was examined by combining multiple electron transport (ETL) and hole transport layers (HTL) to identify a high-performing and stable architecture. The analysis shows that device efficiency is strongly influenced by interfacial band alignment, layer selection, absorber thickness, and defect density. Among the tested configurations, the ITO/WS<sub>2</sub>/Cs<sub>2</sub>GeSnCl<sub>6</sub>/Cu<sub>2</sub>Te/Ni structure consistently delivers the most favorable charge extraction and reduced recombination losses. Furthermore, this configuration achieves the highest power conversion efficiency (PCE) of 22.74%. Additional simulations reveal that resistive effects, temperature, and interface quality play decisive roles in determining overall device behavior. The study also confirms the structural suitability of Cs<sub>2</sub>GeSnCl<sub>6</sub> for photovoltaic use through tolerance factor analysis. Overall, this work provides design guidelines for improving lead-free double perovskite solar cells and highlights the promise of Cs<sub>2</sub>GeSnCl<sub>6</sub> as an absorber for next-generation photovoltaics.</p>

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Advancing the performance of Cs2GeSnCl6-based double halide perovskite solar cells: a comprehensive SCAPS-1D analysis

  • 期刊论文

  • 发表日期：

    2026年5月28日

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  • Fayzul Bari Shikder,
  • Ibrahim Yaacoub Bouderbala,
  • Md Shahazan Parves

摘要

Lead-free perovskite solar cells (PSCs) are attracting growing interest for sustainable photovoltaic applications. In this work, the photovoltaic potential of Cs2GeSnCl6 is investigated using SCAPS-1D simulation. A broad set of device structures was examined by combining multiple electron transport (ETL) and hole transport layers (HTL) to identify a high-performing and stable architecture. The analysis shows that device efficiency is strongly influenced by interfacial band alignment, layer selection, absorber thickness, and defect density. Among the tested configurations, the ITO/WS2/Cs2GeSnCl6/Cu2Te/Ni structure consistently delivers the most favorable charge extraction and reduced recombination losses. Furthermore, this configuration achieves the highest power conversion efficiency (PCE) of 22.74%. Additional simulations reveal that resistive effects, temperature, and interface quality play decisive roles in determining overall device behavior. The study also confirms the structural suitability of Cs2GeSnCl6 for photovoltaic use through tolerance factor analysis. Overall, this work provides design guidelines for improving lead-free double perovskite solar cells and highlights the promise of Cs2GeSnCl6 as an absorber for next-generation photovoltaics.