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<p>In this study, we investigate the performance of a lead-free WS₂/NaZnBr₃/NiO perovskite solar cell using SCAPS-1D simulations. Key photovoltaic parameters, including short-circuit current density (J<sub>SC</sub>), open-circuit voltage (V<sub>OC</sub>), fill factor (FF), and power conversion efficiency (PCE), are systematically analyzed to optimize device performance. The NaZnBr₃ absorber exhibits a suitable bandgap (1.65&#xa0;eV) and favorable optoelectronic properties, while the incorporation of WS₂ as the electron transport layer (ETL) and NiO as the hole transport layer (HTL) enhances charge extraction and reduces recombination losses. Simulation results show that optimizing absorber thickness (~ 1.5–1.8&#xa0;μm), doping concentrations, and interface properties leads to a maximum V<sub>OC</sub> of 1.57&#xa0;V, J<sub>SC</sub> of 36.33&#xa0;mA/cm², FF of 88.38%, and an overall PCE of 26.59%. Furthermore, the effects of series and shunt resistances, temperature variations, and work-function tuning are examined, providing insights into how these factors influence device performance. These findings demonstrate the potential of WS₂/NaZnBr₃/NiO heterostructures as promising candidates for high-efficiency, lead-free perovskite solar cells.</p>

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Exploring the potential of lead-free NaZnBr3 perovskites for high-efficiency solar cells

  • 期刊论文

  • 发表日期：

    2026年4月17日

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  • Abderrahim Yousfi,
  • Okba Saidani,
  • Yehya Belhadad,
  • Girija Shankar Sahoo

摘要

In this study, we investigate the performance of a lead-free WS₂/NaZnBr₃/NiO perovskite solar cell using SCAPS-1D simulations. Key photovoltaic parameters, including short-circuit current density (JSC), open-circuit voltage (VOC), fill factor (FF), and power conversion efficiency (PCE), are systematically analyzed to optimize device performance. The NaZnBr₃ absorber exhibits a suitable bandgap (1.65 eV) and favorable optoelectronic properties, while the incorporation of WS₂ as the electron transport layer (ETL) and NiO as the hole transport layer (HTL) enhances charge extraction and reduces recombination losses. Simulation results show that optimizing absorber thickness (~ 1.5–1.8 μm), doping concentrations, and interface properties leads to a maximum VOC of 1.57 V, JSC of 36.33 mA/cm², FF of 88.38%, and an overall PCE of 26.59%. Furthermore, the effects of series and shunt resistances, temperature variations, and work-function tuning are examined, providing insights into how these factors influence device performance. These findings demonstrate the potential of WS₂/NaZnBr₃/NiO heterostructures as promising candidates for high-efficiency, lead-free perovskite solar cells.