High-sensitivity and Q-engineered all-dielectric metasurface sensor driven by bound states in the continuum
摘要
We numerically investigate an all-dielectric metasurface sensor based on an asymmetrically notched silicon nanodisks array for high-performance refractive index sensing via quasi-BIC excitation. By breaking in-plane rotational symmetry and gradually adjusting the asymmetry structure parameter, a tunable Fano resonance with flexible Q-factor engineered in the near-infrared region can be achieved. Under vertical illumination along the z-axis, the optimized high-Q factor metasurface configuration generates an extremely narrow resonance peak at 980 nm with calculated Q-factor reaching 9400. For ambient refractive indices ranging from 1.33 to 1.37, the sensor exhibits a sensitivity of 440.3 nm/RIU and a FOM of 4223 RIU⁻¹. With the same designed nanodisk unit by geometric parameter optimization, the Q-factor can be deliberately adjusted to 765 to enable the intensity-based sensing scheme achieving a sensitivity of 26.2 RIU⁻¹ at a fixed wavelength. Owing to its simple structure and dual- scheme sensing capability, the proposed all-dielectric metasurface offers a promising platform for applications in biosensing, environmental monitoring, and optical filtering.