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<p>In this study, we simulated a photodetector device utilizing lead sulfide (PbS) as the active scattering region, with silicon and graphene functioning as the n-contact and p-contact electrodes, respectively. The primary focus was on analyzing the photodetector characteristics of this configuration. We investigated key parameters such as responsivity, absorption coefficient, and total reflectance in relation to photon energy. Additionally, we examined electron concentration as a function of wavelength, as well as dark current and photocurrent as functions of voltage. The detectivity was also analyzed in relation to both voltage and wavelength. Our results indicated that peak values for responsivity, absorption coefficient, and total reflectance occurred in the infrared (IR) region, reaching 6.08 A/W, 0.0187 <InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="12596_2025_2977_Article_IEq1.gif" Format="GIF" Height="19" Rendition="HTML" Resolution="72" Type="Linedraw" Width="41" /> </InlineMediaObject> <EquationSource Format="TEX">\(\upmu \textrm{m}^{-1}\)</EquationSource> </InlineEquation>, and <InlineEquation ID="IEq2"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="12596_2025_2977_Article_IEq2.gif" Format="GIF" Height="17" Rendition="HTML" Resolution="72" Type="Linedraw" Width="82" /> </InlineMediaObject> <EquationSource Format="TEX">\(4.86 \times 10^{-5}\)</EquationSource> </InlineEquation>, respectively. Furthermore, the dark current exhibited a low maximum value of approximately 9.45 nA at a voltage of 7.61 mV. The detectivity also peaked in the IR region, achieving a value of 0.78 <InlineEquation ID="IEq3"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="12596_2025_2977_Article_IEq3.gif" Format="GIF" Height="18" Rendition="HTML" Resolution="72" Type="Linedraw" Width="141" /> </InlineMediaObject> <EquationSource Format="TEX">\(\times 10^{12} \textrm{cm}.\textrm{Hz}^{0.5}.\textrm{W}^{-1}\)</EquationSource> </InlineEquation></p>

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Enhanced infrared photodetector performance: a simulation study of lead sulfide with silicon and graphene electrodes

  • 期刊论文

  • 发表日期：

    2025年11月6日

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  • Fatemeh Shirvani,
  • Aliasghar Shokri

摘要

In this study, we simulated a photodetector device utilizing lead sulfide (PbS) as the active scattering region, with silicon and graphene functioning as the n-contact and p-contact electrodes, respectively. The primary focus was on analyzing the photodetector characteristics of this configuration. We investigated key parameters such as responsivity, absorption coefficient, and total reflectance in relation to photon energy. Additionally, we examined electron concentration as a function of wavelength, as well as dark current and photocurrent as functions of voltage. The detectivity was also analyzed in relation to both voltage and wavelength. Our results indicated that peak values for responsivity, absorption coefficient, and total reflectance occurred in the infrared (IR) region, reaching 6.08 A/W, 0.0187 \(\upmu \textrm{m}^{-1}\) , and \(4.86 \times 10^{-5}\) , respectively. Furthermore, the dark current exhibited a low maximum value of approximately 9.45 nA at a voltage of 7.61 mV. The detectivity also peaked in the IR region, achieving a value of 0.78 \(\times 10^{12} \textrm{cm}.\textrm{Hz}^{0.5}.\textrm{W}^{-1}\)