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<p>Ultraviolet (UV) photodetectors with high responsivity, rapid response speed, and low noise are crucial for imaging, communication, and environmental monitoring. Here, we present a direct comparative study of Bi₂O₃/Si and Ge/Si heterojunction photodetectors synthesized via pulsed laser ablation in liquid (LAL), a green, precursor-free route to nanostructure fabrication. Structural analysis confirmed the formation of monoclinic α-Bi₂O₃ nanosheets and cubic Ge nanowalls, both exhibiting excellent crystallinity. The Bi₂O₃/Si device delivered outstanding performance, achieving a responsivity of 16 A/W, quantum efficiency above 72.9%, detectivity of 4.64 × 10⁹ Jones, and the lowest noise equivalent power (2.15 × 10⁻<sup>12</sup> W). In contrast, the Ge/Si device demonstrated faster rise and decay times (~ 0.02&#xa0;s) and lower noise, attributed to quantum-confined carrier transport in Ge nanowalls. This systematic benchmarking highlights the complementary strengths of oxide- and semiconductor-based heterojunctions: Bi₂O₃/Si for high-sensitivity UV detection and Ge/Si for high-speed, low-noise operation. These insights provide valuable guidelines for tailoring next-generation UV photodetectors for diverse optoelectronic applications.</p>

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Comparative performance analysis of Bi₂O₃/Si and Ge/Si heterojunction photodetectors synthesized via laser ablation in liquid

  • 期刊论文

  • 发表日期：

    2025年11月5日

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  • Abdullah Marzouq Alharbi,
  • Naser M. Ahmed

摘要

Ultraviolet (UV) photodetectors with high responsivity, rapid response speed, and low noise are crucial for imaging, communication, and environmental monitoring. Here, we present a direct comparative study of Bi₂O₃/Si and Ge/Si heterojunction photodetectors synthesized via pulsed laser ablation in liquid (LAL), a green, precursor-free route to nanostructure fabrication. Structural analysis confirmed the formation of monoclinic α-Bi₂O₃ nanosheets and cubic Ge nanowalls, both exhibiting excellent crystallinity. The Bi₂O₃/Si device delivered outstanding performance, achieving a responsivity of 16 A/W, quantum efficiency above 72.9%, detectivity of 4.64 × 10⁹ Jones, and the lowest noise equivalent power (2.15 × 10⁻12 W). In contrast, the Ge/Si device demonstrated faster rise and decay times (~ 0.02 s) and lower noise, attributed to quantum-confined carrier transport in Ge nanowalls. This systematic benchmarking highlights the complementary strengths of oxide- and semiconductor-based heterojunctions: Bi₂O₃/Si for high-sensitivity UV detection and Ge/Si for high-speed, low-noise operation. These insights provide valuable guidelines for tailoring next-generation UV photodetectors for diverse optoelectronic applications.