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<p>Phototransistors (photo-TFTs) are essential components in optoelectronic devices due to their ability to detect light and convert it into electrical signals. Understanding how material defects affect their performance is critical for optimizing these devices. In this study, we used TCAD simulations to investigate the behavior of amorphous Indium Gallium Zinc Oxide (a-IGZO) phototransistors. Our results demonstrate that the a-IGZO photo-TFT exhibits high photosensitivity, approximately 10<sup>5</sup>, even at low light intensity levels of 0.2&#xa0;W/cm<sup>2</sup>. The device operates effectively across a wide range of wavelengths, from 200 to 320&#xa0;nm. Performance is predominantly influenced by the presence of donor and acceptor defects. While acceptor defects have a minimal impact, donor defects, particularly those with high density near the bandgap, significantly degrade the TFT’s photosensitivity. These findings highlight the importance of controlling donor defect density to optimize the performance of a-IGZO phototransistors.</p>

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Impact of defects on the electrical characteristics of an IGZO phototransistors: simulation and analysis

  • 期刊论文

  • 发表日期：

    2025年10月26日

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  • Mohamed Labed,
  • Madani Labed,
  • Nouredine Sengouga,
  • Afak Meftah,
  • Abdallajalil Labed,
  • You Seung Rim

摘要

Phototransistors (photo-TFTs) are essential components in optoelectronic devices due to their ability to detect light and convert it into electrical signals. Understanding how material defects affect their performance is critical for optimizing these devices. In this study, we used TCAD simulations to investigate the behavior of amorphous Indium Gallium Zinc Oxide (a-IGZO) phototransistors. Our results demonstrate that the a-IGZO photo-TFT exhibits high photosensitivity, approximately 105, even at low light intensity levels of 0.2 W/cm2. The device operates effectively across a wide range of wavelengths, from 200 to 320 nm. Performance is predominantly influenced by the presence of donor and acceptor defects. While acceptor defects have a minimal impact, donor defects, particularly those with high density near the bandgap, significantly degrade the TFT’s photosensitivity. These findings highlight the importance of controlling donor defect density to optimize the performance of a-IGZO phototransistors.