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<p>The optoelectronic and nonlinear optical characteristics of PbS: Cs thin films formed using the spray pyrolysis process are covered in this work. X-ray diffraction (XRD) studies reveal that all films exhibit cubic structure. Crystallite size of PbS varies between 52&#xa0;nm and 69&#xa0;nm with Cs doping. Cs<sup>+</sup> ions improved PbS’s optical transparency and widened its band gap from 1.98 to 2.11&#xa0;eV. FTIR spectra confirmed the presence of Pb–S related band at around 458&#xa0;cm<sup>− 1</sup> for all the films. As Cs doping concentration increases, electrical resistivity decreases. A minimum resistivity of 0.59 ϰ 10<sup>− 3</sup> Ω.m and sheet resistance of 17.25 Ω/□ was realized with 4 wt% Cs concentration. Haacke’s quality factor (ϕ) improved with Cs doping and the 4 wt% doped film exhibited a high value of 9.995 ϰ 10<sup>− 3</sup> Ω<sup>−1</sup>. Cs<sup>+</sup> ions improved the nonlinear refractive index of PbS. Cs doping causes PbS’ centro-symmetric properties to break because of the non-homogeneous lattice strain which improved its nonlinear optical properties.</p>

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Non-linear optical and optoelectronic characteristics of PbS thin films doped with Cs+ ions

  • 期刊论文

  • 发表日期：

    2025年9月26日

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  • N. Manjula,
  • S. Chitra Devi,
  • A. R. Balu,
  • N. Arunkumar,
  • Z. Delci,
  • M. Sriramraj,
  • V. Rajamani,
  • A. Vinith

摘要

The optoelectronic and nonlinear optical characteristics of PbS: Cs thin films formed using the spray pyrolysis process are covered in this work. X-ray diffraction (XRD) studies reveal that all films exhibit cubic structure. Crystallite size of PbS varies between 52 nm and 69 nm with Cs doping. Cs+ ions improved PbS’s optical transparency and widened its band gap from 1.98 to 2.11 eV. FTIR spectra confirmed the presence of Pb–S related band at around 458 cm− 1 for all the films. As Cs doping concentration increases, electrical resistivity decreases. A minimum resistivity of 0.59 ϰ 10− 3 Ω.m and sheet resistance of 17.25 Ω/□ was realized with 4 wt% Cs concentration. Haacke’s quality factor (ϕ) improved with Cs doping and the 4 wt% doped film exhibited a high value of 9.995 ϰ 10− 3 Ω−1. Cs+ ions improved the nonlinear refractive index of PbS. Cs doping causes PbS’ centro-symmetric properties to break because of the non-homogeneous lattice strain which improved its nonlinear optical properties.