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<p>In this work, we propose a dual-junction solar cell (DJSCs) with combined band gaps of 1.9&#xa0;eV and 2.3&#xa0;eV using indium gallium phosphide/indium gallium aluminum phosphide (InGaP/InAlGaP) DJSCs without an anti-reflection coating (ARC), as an alternative to the conventional InGaP/GaAs DJSCs system. The choice of AlGaInP is motivated by its larger band gap, which is expected to result in higher conversion efficiency. Using Silvaco Atlas, we added and optimized a double back surface field (BSF) and a double window layers on the top cell. After optimization, the new BSF top layer on the cell surface achieved a conversion efficiency of 68.726% with an optimal thickness of 0.3&#xa0;μm. The new window top layer yielded a conversion efficiency of 70.6405% with an optimal thickness of 0.04&#xa0;μm and a doping density of 2E17 cm⁻³. The final results of the optimized (DJSCs) show a short-circuit current density (Jsc) of 24.274&#xa0;mA/cm², an open-circuit voltage (Voc) of 3.239&#xa0;V, a fill factor (FF) of 90.635%, and a conversion efficiency of 71.241% at 293&#xa0;K. This study achieved a relative efficiency improvement of 20.22%.</p>

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Effect of new top BSF and window layers on the performance of InxGa₁₋xP/Inx(AlyGa₁₋y)xP dual-junction solar cells

  • 期刊论文

  • 发表日期：

    2025年9月29日

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  • Ikram Zidani,
  • Zouaoui Bensaad,
  • Ahmed Hafaifa,
  • Hamza Abid

摘要

In this work, we propose a dual-junction solar cell (DJSCs) with combined band gaps of 1.9 eV and 2.3 eV using indium gallium phosphide/indium gallium aluminum phosphide (InGaP/InAlGaP) DJSCs without an anti-reflection coating (ARC), as an alternative to the conventional InGaP/GaAs DJSCs system. The choice of AlGaInP is motivated by its larger band gap, which is expected to result in higher conversion efficiency. Using Silvaco Atlas, we added and optimized a double back surface field (BSF) and a double window layers on the top cell. After optimization, the new BSF top layer on the cell surface achieved a conversion efficiency of 68.726% with an optimal thickness of 0.3 μm. The new window top layer yielded a conversion efficiency of 70.6405% with an optimal thickness of 0.04 μm and a doping density of 2E17 cm⁻³. The final results of the optimized (DJSCs) show a short-circuit current density (Jsc) of 24.274 mA/cm², an open-circuit voltage (Voc) of 3.239 V, a fill factor (FF) of 90.635%, and a conversion efficiency of 71.241% at 293 K. This study achieved a relative efficiency improvement of 20.22%.