A numerical study to enhance power conversion efficiency of n-CdS/p-CdTe thin film based solar cell through SCAPS-1D
摘要
In this article, a numerical study of cadmium sulfide (CdS) and cadmium telluride (CdTe) based thin film solar cell has been demonstrated to improve power conversion efficiency (PCE). Cadmium selenide (CdSe) and stannic oxide (SnO2) layers are used as Back Surface Field (BSF) and transparent conductive oxide (TCO) respectively. The SCAPS-1D simulator is used to analyze the photovoltaic parameters; open circuit voltage (VOC), short-circuit current density (JSC), fill factor (FF), PCE and external quantum efficiency (EQC). It is observed that, the PEC is increased by ~ 21% by the use of CdSe and SnO2 with optimum absorber layer (CdTe) thickness and window layer (CdS) thickness 1.5 μm and 0.01 μm respectively. Moreover, the influence of layer thickness, carrier concentration, defect density in CdSe, CdTe, CdS, SnO2 layers and CdSe/CdTe & CdTe/CdS interface defect density on overall solar cell performance is studied. The proposed PEC with optimized parameters is calculated to be 29.28% with VOC = 1.1351 V, JSC = 89.09 mA/cm2 and FF = 82.55%. This theoretical study shows huge promise in low-cost thin-film based solar cell energy harvesting.