Performance optimization of inorganic Cs4CuSb2Cl12 nanocrystal double perovskite photovoltaic cells with WS2 as ETL and diverse HTLs
摘要
In proposed study, a lead-free inorganic nanocrystal double perovskite solar cell utilizing Cs4CuSb2Cl12 is examined and optimized. Various hole transport layers (HTLs), including cuprous oxide (Cu2O), copper barium tin sulfide (CBTS), cupric oxide (CuO), and Spiro-MeOTAD, are examined with WS2 serving as the electron transport layer (ETL). The optimized configuration exhibited impressive photovoltaic performance, achieving a open-circuit voltage (Voc) of 1.20 V, short-circuit current density (Jsc) of 24.7 mA/cm², fill factor (FF) of 81.53%, and a record-high power conversion efficiency (PCE) of 24.38% for the Cs₄CuSb₂Cl₁₂ absorber layer with Cu2O as the HTL and the specified ETL. Additionally, the influence of absorber thickness, defect density, ETL and HTL thickness, interface defects between the HTL and perovskite layer, and between the perovskite and ETL layer on solar cell performance is investigated, along with the effects of operating temperature.