Scholarlink

<p>Ray-tracing has been widely used to analyze the optical behavior of solar energy devices. Vanadium oxide (V<sub>2</sub>Ox) is a promising candidate as an emitter layer to form a solar cell on silicon (Si) and an anti-reflective coating (ARC). This is due to the refractive index and thickness of V<sub>2</sub>Ox, which aims to minimize the surface reflectance in the long wavelength (about 600&#xa0;nm) and the light-trapping performance of V<sub>2</sub>Ox is less effective at the short wavelengths. In this study, ray-tracing simulation was used to study the effects of different thicknesses of V<sub>2</sub>Ox ARC on the front Si solar cells. The thicknesses of V<sub>2</sub>Ox ARC are investigated from 60&#xa0;nm to 80&#xa0;nm. Flat Si without V<sub>2</sub>Ox ARC is used as a reference. V<sub>2</sub>Ox with 70&#xa0;nm exhibit the highest broadband light absorbance in this work. In the solar cell, the optimized V<sub>2</sub>Ox emitter on the flat Si illustrates improved open-circuit voltage (V<sub>oc</sub>), maximum photogeneration current density (J<sub>G</sub>) and conversion efficiency (η). The highest η of 18.6% is achieved for the optimized V<sub>2</sub>Ox on inverted pyramids solar cell. The results illustrate that V<sub>2</sub>Ox is a promising ARC and emitter for the Si solar cell.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Ray-tracing of vanadium oxide as anti-reflective coating on inverted pyramids silicon for solar cells

  • 期刊论文

  • 发表日期：

    2025年5月7日

查看全文
  • Halo Dalshad Omar,
  • Sara Sardar Hamad

摘要

Ray-tracing has been widely used to analyze the optical behavior of solar energy devices. Vanadium oxide (V2Ox) is a promising candidate as an emitter layer to form a solar cell on silicon (Si) and an anti-reflective coating (ARC). This is due to the refractive index and thickness of V2Ox, which aims to minimize the surface reflectance in the long wavelength (about 600 nm) and the light-trapping performance of V2Ox is less effective at the short wavelengths. In this study, ray-tracing simulation was used to study the effects of different thicknesses of V2Ox ARC on the front Si solar cells. The thicknesses of V2Ox ARC are investigated from 60 nm to 80 nm. Flat Si without V2Ox ARC is used as a reference. V2Ox with 70 nm exhibit the highest broadband light absorbance in this work. In the solar cell, the optimized V2Ox emitter on the flat Si illustrates improved open-circuit voltage (Voc), maximum photogeneration current density (JG) and conversion efficiency (η). The highest η of 18.6% is achieved for the optimized V2Ox on inverted pyramids solar cell. The results illustrate that V2Ox is a promising ARC and emitter for the Si solar cell.