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<p>In this work, surface plasmon resonance and plasmonic nanoparticle (NPs) principles can localize the light field, enhancing the performance of optoelectronic devices. Here, nanoparticles are utilized to boost the detection of terahertz (THz) radiation from commercial antennas made from low-temperature grown Gallium Arsenide (LT-GaAs). For this purpose, titanium nitrate (Tin) NPs were prepared plasmonically using pulsed laser ablation (PLA) approaches. Zeta potential, particle size, and absorbance represent nanoparticles in their colloidal forms. Additionally, an LPA can reduce particle size and enhance potential. Tin NPs produced using these methods exhibit a consistent and elevated absorbance across the spectral range of 500&#xa0;nm to approximately 900&#xa0;nm. A layer of poly-dispersed Tin NPs, prepared by PLA and deposited on LT-GaAs device surface, had the generation of THz signal from coplanar strapline antennas, achieving an improved ratio of nearly 100%. The ideal average particle size is approximately 40&#xa0;nm.</p>

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Enhancement of photoconductive antenna detection utilizing lower nanoparticle regime via TDS-microscope configuration

  • 期刊论文

  • 发表日期：

    2025年4月9日

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  • Oday M. Abdulmunem

摘要

In this work, surface plasmon resonance and plasmonic nanoparticle (NPs) principles can localize the light field, enhancing the performance of optoelectronic devices. Here, nanoparticles are utilized to boost the detection of terahertz (THz) radiation from commercial antennas made from low-temperature grown Gallium Arsenide (LT-GaAs). For this purpose, titanium nitrate (Tin) NPs were prepared plasmonically using pulsed laser ablation (PLA) approaches. Zeta potential, particle size, and absorbance represent nanoparticles in their colloidal forms. Additionally, an LPA can reduce particle size and enhance potential. Tin NPs produced using these methods exhibit a consistent and elevated absorbance across the spectral range of 500 nm to approximately 900 nm. A layer of poly-dispersed Tin NPs, prepared by PLA and deposited on LT-GaAs device surface, had the generation of THz signal from coplanar strapline antennas, achieving an improved ratio of nearly 100%. The ideal average particle size is approximately 40 nm.