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<p>In this work, pure and tin ion-composed PVP fiber film at different composing ratios was prepared using an electrospinning technique for photodetector application. The difference in the addition of tin acetate causes variations in the structure, morphology, and optical properties of the PVP fibers. Increasing doping concentrations reduces the fiber diameter, enhances intertwining, and increases fiber density in the prepared films. FTIR analysis confirms the successful bond of tin ions with the PVP matrix. These interactions enhance the charge transport in photodetector devices. The optical band gap was reduced from 3.0 in pure PVP to 2.8&#xa0;eV at a 3:7 mixing ratio. These changes in properties of the prepared woven film of PVP fibers improve its photosensitivity of the 3:7 sample deposited on Si wafer n-type with orientation (111) to 24.1% under violet light compared with the other light colors. These results demonstrate the potential of tin-doped PVP fibers as a cost-effective and efficient substance for photodetector applications.</p>

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Fabrication and characterization of electrospun PVP fibers doped with tin ions for photodetector applications

  • 期刊论文

  • 发表日期：

    2025年3月8日

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  • Yasser O. Naif,
  • Isam M. Ibrahim

摘要

In this work, pure and tin ion-composed PVP fiber film at different composing ratios was prepared using an electrospinning technique for photodetector application. The difference in the addition of tin acetate causes variations in the structure, morphology, and optical properties of the PVP fibers. Increasing doping concentrations reduces the fiber diameter, enhances intertwining, and increases fiber density in the prepared films. FTIR analysis confirms the successful bond of tin ions with the PVP matrix. These interactions enhance the charge transport in photodetector devices. The optical band gap was reduced from 3.0 in pure PVP to 2.8 eV at a 3:7 mixing ratio. These changes in properties of the prepared woven film of PVP fibers improve its photosensitivity of the 3:7 sample deposited on Si wafer n-type with orientation (111) to 24.1% under violet light compared with the other light colors. These results demonstrate the potential of tin-doped PVP fibers as a cost-effective and efficient substance for photodetector applications.