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<p>The Shockley-Queisser limit causes a curtailment in the capability of heterojunction thin-film photovoltaic devices, to generate photocurrent from the incident electromagnetic radiation. This barrier in achieving high device efficiency maybe mitigated by utilizing multi-junction tandem configuration of photovoltaics to ensure higher absorption of the incident spectrum. This study focuses on the computational modeling of the top sub-cell (TSC) and bottom sub-cell (BSC) with CsSn<sub>0.5</sub>Ge<sub>0.5</sub>I<sub>3</sub> and Cu(In,Ga)S<sub>2</sub> as the absorbers respectively, in the monolithic tandem architecture, using SCAPS-1D software. The device is initially optimised by altering the physical aspects such as layer thickness, bulk and interfacial trap densities and work function of the metal electrodes at either contact. Consequently, the optimised standalone structures of these two sub-cells are integrated to numerically establish a series connection, thus, creating the multi-junction tandem configuration. The findings of the study indicate that an efficiency <InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="12596_2025_2646_Article_IEq1.gif" Format="GIF" Height="17" Rendition="HTML" Resolution="72" Type="Linedraw" Width="50" /> </InlineMediaObject> <EquationSource Format="TEX">\(\ge 26\%\)</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mo>≥</mo> <mn>26</mn> <mo>%</mo> </mrow> </math></EquationSource> </InlineEquation> was recorded with 350&#xa0;nm and 2.4&#xa0;μm thick absorber regions of the TSC and BSC respectively. This study underscores the potential of perovskite materials in tandem configuration for increased efficiency and next-generation thin-film applications.</p>

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Advanced numerical modeling of monolithic non-carcinogenic inorganic halide perovskite-ternary chalcogenide tandem photovoltaic device

  • 期刊论文

  • 发表日期：

    2025年4月2日

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  • Manu Agarwal,
  • Jaspinder Kaur,
  • Rikmantra Basu,
  • Ajay Kumar Sharma,
  • Jaya Madan,
  • Rahul Pandey

摘要

The Shockley-Queisser limit causes a curtailment in the capability of heterojunction thin-film photovoltaic devices, to generate photocurrent from the incident electromagnetic radiation. This barrier in achieving high device efficiency maybe mitigated by utilizing multi-junction tandem configuration of photovoltaics to ensure higher absorption of the incident spectrum. This study focuses on the computational modeling of the top sub-cell (TSC) and bottom sub-cell (BSC) with CsSn0.5Ge0.5I3 and Cu(In,Ga)S2 as the absorbers respectively, in the monolithic tandem architecture, using SCAPS-1D software. The device is initially optimised by altering the physical aspects such as layer thickness, bulk and interfacial trap densities and work function of the metal electrodes at either contact. Consequently, the optimised standalone structures of these two sub-cells are integrated to numerically establish a series connection, thus, creating the multi-junction tandem configuration. The findings of the study indicate that an efficiency \(\ge 26\%\) ≥ 26 % was recorded with 350 nm and 2.4 μm thick absorber regions of the TSC and BSC respectively. This study underscores the potential of perovskite materials in tandem configuration for increased efficiency and next-generation thin-film applications.