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<p>The article discuss a bicontrollable metamaterial absorber featuring a U-shaped indium arsenide (InAs) layer on an indium antimonide (InSb) substrate, topped with a thin metallic layer. This innovative design operates in the terahertz frequency range and serves as an efficient temperature sensor, delivering enhanced performance through its dual-controllable design. Moreover, in the proposed work bicontrollability is promoted by the InAs layer, that offers magneto-static control. However, another material, InSb which offers temperature control over the maximum absorption frequency. In the proposed work absorption of a normally incident plane wave of more than 99.9% is obtained at 2.8875 THz. Furthermore, the effect of the magnetic field is considered at B = 0.2T, providing tunability of 0.27 THz/T in maximum absorptance frequency on altering the magnetic field from B = 0.1 T − 0.4 T. Furthermore, in the presented work, the thermal controlling action provides 99.99% of absorption at 2.685 THz when the temperature is at T = 280 K along with a high value of temperature sensitivity of 0.018 THz/K (18 GHz/K), while maintaining its high absorptivity in the operating rang of frequency. Thus, the high sensing performance of the proposed structure provides a novel way to modulate THz absorption, which may find its utility as a sensor or detector.</p>

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Bi-controlled terahertz metamaterial absorber with U-shaped InAs for enhanced temperature sensing

  • 期刊论文

  • 发表日期：

    2025年2月23日

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  • Neha Niharika,
  • Dipak Patil,
  • Akhilesh Kumar,
  • Yoges R. Risodkar,
  • Sayali Pawar

摘要

The article discuss a bicontrollable metamaterial absorber featuring a U-shaped indium arsenide (InAs) layer on an indium antimonide (InSb) substrate, topped with a thin metallic layer. This innovative design operates in the terahertz frequency range and serves as an efficient temperature sensor, delivering enhanced performance through its dual-controllable design. Moreover, in the proposed work bicontrollability is promoted by the InAs layer, that offers magneto-static control. However, another material, InSb which offers temperature control over the maximum absorption frequency. In the proposed work absorption of a normally incident plane wave of more than 99.9% is obtained at 2.8875 THz. Furthermore, the effect of the magnetic field is considered at B = 0.2T, providing tunability of 0.27 THz/T in maximum absorptance frequency on altering the magnetic field from B = 0.1 T − 0.4 T. Furthermore, in the presented work, the thermal controlling action provides 99.99% of absorption at 2.685 THz when the temperature is at T = 280 K along with a high value of temperature sensitivity of 0.018 THz/K (18 GHz/K), while maintaining its high absorptivity in the operating rang of frequency. Thus, the high sensing performance of the proposed structure provides a novel way to modulate THz absorption, which may find its utility as a sensor or detector.