Modeling and simulation of lead-free, formamidinium germanium-antimony halide (FA4GeSbCl12) based solar cell
摘要
This study investigates the effect of various parameters on Lead-free, formamidinium germanium-antimony halide-based perovskite (FA4GeSbCl12) solar cells through device simulation. Specifically, adjustments were made to the doping concentration, thickness of the perovskite absorption layer, electron affinities of the electron transport medium and hole transport medium, defect density of the perovskite absorption layer and Different temperature. The simulation utilized the one-dimensional Solar Cells Capacitance Simulator (SCAPS-1D) program. The initial simulation without optimization yielded the output cell parameters: VOC = 1.12 V, JSC = 31.13 mA/cm2, FF = 88.89% and PCE = 31.09%, under AM1.5 simulated sunlight of 1000W/m2 at 300 K. After optimization, the thickness, electron affinity, and doping concentration of the electron transport material and hole transport material were determined to be 200 nm, 3.75 eV, 1.0