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<p>In this article, a novel asymmetrical split ring resonators-based Metal-Insulator-Metal (MIM) plasmonic refractive index sensor is numerically investigated. The MIM waveguide is coupled to split ring resonators on both sides. The presence of a split in the ring resonator generates a strong localized field in the vicinity of resonance condition and supports a distinctive resonance profile known as Fano resonance. The novelty lies in terms of induced asymmetricity due to the changes in the position of a split in the second resonator with respect to a split in the first ring resonator. This specific arrangement helps to tune the Fano resonance through a single parameter i.e. position of split in 2nd resonator. The performance of the sensor is measured through sensitivity and Figure of merit (FOM). A large value of Sensitivity S = 1630&#xa0;nm/RIU and FOM = 180 is obtained with the proposed sensor. The enhanced sensitivity and FOM demonstrate the sensors’ ability for detecting low concentration of analytes.</p>

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Asymmetrical split ring resonators based plasmonic sensor for improved sensing performance

  • 期刊论文

  • 发表日期：

    2025年2月11日

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  • Rukhsar Zafar,
  • Vinay Kanungo,
  • Rahul Pandey,
  • Sanjeev K. Metya,
  • Lokesh Tharani,
  • Ghanshyam Singh

摘要

In this article, a novel asymmetrical split ring resonators-based Metal-Insulator-Metal (MIM) plasmonic refractive index sensor is numerically investigated. The MIM waveguide is coupled to split ring resonators on both sides. The presence of a split in the ring resonator generates a strong localized field in the vicinity of resonance condition and supports a distinctive resonance profile known as Fano resonance. The novelty lies in terms of induced asymmetricity due to the changes in the position of a split in the second resonator with respect to a split in the first ring resonator. This specific arrangement helps to tune the Fano resonance through a single parameter i.e. position of split in 2nd resonator. The performance of the sensor is measured through sensitivity and Figure of merit (FOM). A large value of Sensitivity S = 1630 nm/RIU and FOM = 180 is obtained with the proposed sensor. The enhanced sensitivity and FOM demonstrate the sensors’ ability for detecting low concentration of analytes.