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<p>This work reports on the simulation of a solar cell design composed of (i) zinc oxide as window layer, (ii) zinc sulfide as buffer layer, (iii) surface defect layer, (iv) CIGS absorber layer, and (v) Sb<sub>2</sub>S<sub>3</sub> back surface field layer using SCAPS-1D software with an aim of achieving high photovoltaic (PV) performance and low thermal effect. Simulation results indicate that a 200&#xa0;nm Sb<sub>2</sub>S<sub>3</sub> layer in combination with about 1600&#xa0;nm CIGS layer considerably enhances the quantum efficiency, PV performance parameters, and J-V characteristics of the proposed solar cell. The achieved values of V<sub>OC</sub> (open circuit voltage), J<sub>SC</sub> (short circuit current density), PCE (power conversion efficiency), and fill factor (FF) are 1.059&#xa0;V, 42.08&#xa0;mA/cm<sup>2</sup>, 35.82%, and 80.31%, respectively, for the proposed solar cell design. Further, operating the proposed solar cell at moderately elevated temperatures (300–350&#xa0;K) is not expected to be a major issue, as the power temperature coefficient is extremely small (− 0.034% per K), which is comparable to commercially available solar cells. Furthermore, the PV performance of the proposed solar cell is notably better than recently reported (2023–24) solar cell designs. These results are poised to contribute to the ongoing development of PV solar cells with larger PCE and superior stability including thermal stability.</p>

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Simulation of ZnO (window layer)-ZnS (buffer)-SDL-CIGS (absorber)-Sb2S3 (back surface field layer) solar cell design achieving 35.82% power conversion efficiency with low thermal effect

  • 期刊论文

  • 发表日期：

    2025年2月3日

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  • Sweety Chauhan,
  • Anuj K. Sharma,
  • Nitin Singh Singha,
  • Alok Kumar Patel,
  • Yogendra Kumar Prajapati

摘要

This work reports on the simulation of a solar cell design composed of (i) zinc oxide as window layer, (ii) zinc sulfide as buffer layer, (iii) surface defect layer, (iv) CIGS absorber layer, and (v) Sb2S3 back surface field layer using SCAPS-1D software with an aim of achieving high photovoltaic (PV) performance and low thermal effect. Simulation results indicate that a 200 nm Sb2S3 layer in combination with about 1600 nm CIGS layer considerably enhances the quantum efficiency, PV performance parameters, and J-V characteristics of the proposed solar cell. The achieved values of VOC (open circuit voltage), JSC (short circuit current density), PCE (power conversion efficiency), and fill factor (FF) are 1.059 V, 42.08 mA/cm2, 35.82%, and 80.31%, respectively, for the proposed solar cell design. Further, operating the proposed solar cell at moderately elevated temperatures (300–350 K) is not expected to be a major issue, as the power temperature coefficient is extremely small (− 0.034% per K), which is comparable to commercially available solar cells. Furthermore, the PV performance of the proposed solar cell is notably better than recently reported (2023–24) solar cell designs. These results are poised to contribute to the ongoing development of PV solar cells with larger PCE and superior stability including thermal stability.