<p>This review comparatively evaluates new data reflecting the optoelectronics properties of MOS and potential further research directions; in addition, the focus is on raising the functional characteristics of porous silicon to enhance the responsivity and reduce the unfavorable influences that may decrease the list of optoelectronics uses of Si nanostructure. An overview of research on silicon photodetectors and how different variables affect how they react to light is conducted. The two types of photodetectors that are the focus of this study are silicon-based and porous silicon-based. Both of these types of photodetectors employ metal oxide semiconductors to improve light absorption in the ultraviolet spectrum. By add metal oxide semiconductor (MOS) to UV photodetector, their stability and responsiveness can be increased in the UV spectrum when compared to Si-based equivalents. Based on these studies, it was discovered that the experimental results are significantly impacted by the control of PLD process variables, such as laser beam wavelength, laser fluency, substrate-target distance, and growth time. These variables improve the structural and optical properties of prepared thin films and increase the responsivity, detection, and high quantum efficiency of photodetector devices.</p>