Investigation optical and structural characterization for WO₃/CuO/ITO nano hetreostructure for optoelectronic devices

Electrochemical materials especially Tungsten oxide have attracted great attention because of their exceptional optical and structural properties. A Simple method of Co-Precipitation was used to synthesize a tri-layer of WO₃/CuO/ITO nano heterostructure and investigate its effectiveness for optoelectronic devices. XRD, SEM, and UV–Visible Photoluminescence characterization for optoelectronic devices were investigated. XRD patterns reveal a polycrystalline nature for samples. UV–visible characterization indicates band gap energies 3, 2.55, and 2.95 eV at absorption edges of 380, 340, and 395 nm for WO₃, CuO, and heterostructure, respectively. Photoluminescence and power light results indicate the emission in the region (400–500) nm. Electrical studies of heterostructure show high electron mobility, increased electrical conductivity, and activation energy. Forward current generated from heterostructure arises under illumination which gives indication of good optoelectronic performance such as solar cells, photo anodes, etc.