Enhancing CsSn0.5Ge0.5I3 perovskite solar cell efficiency: role of Cl-doped SnO2 layer and absorber properties
摘要
In this work, CsSn0.5Ge0.5I3 is sandwiched between two charge transport layers, namely Cl@SnO2 (to help electrons reach the cathode) and MoO3 (to help holes reach the anode). In this simulation, different parameters such as thickness and donor concentration of the CsSn0.5Ge0.5I3 absorber layer have been studied. By changing the thickness of CsSn0.5Ge0.5I3 layer, the cell’s performance is improved at thickness of 700 nm with higher PV parameters power conversion efficiency (PCE):21.75%, open circuit voltage (Voc): 1.01 V, short circuit density (Jsc): 26.22 mA cm−2 and fill factor (FF): 82.03%. Achieving such high efficiency with an optimized structure could pave the way for the commercialization of lead-free PVK-based solar cells.