High stability static/dynamic gain in phototransistors for high speed digital optical fiber telecommunication systems based on various modulation code schemes

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发表日期：

2024年12月17日

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Prabakaran Maruthamuthu Paramasivam,
Thiyaneswaran Balashanmugam,
Radhika Rajendran,
Lavanya Kumari Pithani,
Chandran Ramesh Kumar,
Ramachandran Thandaiah Prabu,
Shonak Bansal,
Wahiduzzaman Emon,
Ahmed Nabih Zaki Rashed

摘要

This paper demonstrated the high stability static/dynamic gain in phototransistors for high speed digital optical fiber telecommunication systems based on various modulation code schemes. Maximum time division multiplexing (MTDM), non return to zero (NRZ) and return to zero code (RZ) are used through this study for the modulation techniques in the fiber system for the high speed response of phototransistors. The basic applicable spectral range for various materials (gallium arsenide (GaAs), indium phosphide (InP), indium gallium arsenide (In_xGa_(1-x)As), and indium gallium arsenide phosphide (In_xGa_(1-x)As_yP_(1-y))) and energy band that are used in the phototransistors construction. GaAs, InP, In_xGa_(1-x)As, and In_xGa_(1-x)As_yP_(1-y) are the basic materials based phototransistors. The data rate conversion transfer is demonstrated against the photo current with based applicable spectral range for different suggested materials based phototransistor at the spectal wavelength of 1650 nm.