A comparative study of photonic band gaps for different materials of one dimensional photonic crystals

Photonic band gaps were investigated for two different one-dimensional photonic crystal—air/dielectric and—air/semiconductor systems using seven dissimilar materials including Lithium Niobate (LiNbO₃), Silicon Nitride (Si₃N₄), Indium Tin Oxide (In₂O₃-SnO₂ or ITO), Polymethyle Methacrylate air/semiconductor than that of the air/dielectric system. The largest band gap were found to be 54% in air/Germanium (Ge) system, whereas the least band gap (22%) were observed in air/Silicon di-oxide (SiO₂) system. The higher the refractive index contrast, the wider the band gap and vice versa. From our study we can say, the air/Lithium niobate (LiNbO₃) and air/Germanium (Ge) structures are suitable for the construction of one-dimensional photonic crystal.